Deep level defect in Si-implanted GaN n+-p junction
نویسندگان
چکیده
منابع مشابه
Characterization of an Mg-implanted GaN p-i-n Diode
A p-i-n diode formed by the implantation of Mg in GaN was fabricated and characterized. After implantation, Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C. The Mg-implanted p-i-n diode exhibits rectification and low leakage currents. The realization of an Mg-implanted GaN device is a key step for future power electronic devices.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2003
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1578167